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| ON Semiconductort High-Power NPN Silicon Transistor * Low Collector-Emitter Saturation Voltage - . . . for use in power amplifier and switching circuits applications. VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 2N5302 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS PD, POWER DISSIPATION (WATTS) III I II IIIIIIIIIIIIIIIIIIIIIII II II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I III I I II I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS Rating Symbol VCEO VCB IC IB 2N5302 60 60 30 Unit Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Collector Current - Continuous Base Current 7.5 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 200 1.14 Watts W/_C _C TJ, Tstg -65 to +200 CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Symbol JC Max Unit Thermal Resistance, Junction to Case Thermal Resistance, Case to Ambient 0.875 34 _C/W _C/W CA *Indicates JEDEC Registered Data. TA TC 8.0 200 6.0 150 TC 4.0 100 TA 2.0 50 0 0 0 20 40 60 80 100 120 140 TEMPERATURE (C) 160 180 200 Figure 1. Power Temperature Derating Curve (c) Semiconductor Components Industries, LLC, 2001 1 May, 2001 - Rev. 0 Publication Order Number: 2N5302/D II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *Indicates JEDEC Registered Data. Note 1: Pulse Width v 300 s, Duty Cycle v 2.0%. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) *SWITCHING CHARACTERISTICS *DYNAMIC CHARACTERISTICS ON CHARACTERISTICS *OFF CHARACTERISTICS +11 V -2.0 V Fall Time Storage Time Rise Time Small-Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) Current-Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) *Base-Emitter On Voltage (Note 1) (IC = 15 Adc, VCE = 2.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) *Base Emitter Saturation Voltage (Note 1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc) *Collector-Emitter Saturation Voltage (Note 1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 20 Adc, IB = 2.0 Adc)2 (IC = 30 Adc, IB = 6.0 Adc) DC Current Gain (Note 1) *(IC = 1.0 Adc, VCE = 2.0 Vdc) *(IC = 15 Adc, VCE = 2.0 Vdc) *(IC = 30 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) INPUT PULSE tr 20 ns PW = 10 to 100 s DUTY CYCLE = 2.0% Figure 2. Turn-On time ( (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) dc, 0 dc, 0 dc) 10 Characteristic SWITCHING TIME EQUIVALENT TEST CIRCUITS VCC 3.0 +30 V TO SCOPE tr 20 ns http://onsemi.com 2N5302 2 +11 V -9.0 V 0 INPUT PULSE tr 20 ns PW = 10 to 100 s DUTY CYCLE = 2.0% VCEO(sus) Figure 3. Turn-Off time Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO ICEX ICEX hFE hfe fT ts tr tf Min 10 2.0 40 15 5.0 40 60 - - - - - - - - - - - - - - - - VBB = 7.0 V D 0.75 2.0 3.0 Max 1.0 2.0 1.0 1.7 3.0 1.7 1.8 2.5 5.0 1.0 1.0 5.0 - 60 - 10 - - - VCC 3.0 +30 V mAdc mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc s s s - - TO SCOPE tr 20 ns 2N5302 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 SINGLE PULSE 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 D = 0.5 0.2 0.1 0.05 0.01 0.02 P(pk) JC(t) = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 5.0 10 t, TIME (ms) 20 30 50 100 200 300 500 1000 2000 Figure 4. Thermal Response 100 IC, COLLECTOR CURRENT (AMP) 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 1.0 5302 5.0 ms 1.0 ms TJ = 200C Secondary Breakdown Limited Bonding Wire Limited TC = 25C Thermal Limitations Pulse Duty Cycle 10% 2N5302 50 2.0 3.0 5.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 dc 100 s C, CAPACITANCE (pF) 3000 2000 TJ = 25C 1000 Cib 500 300 200 100 0.5 Cob 1.0 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 5. Active-Region Safe Operating Area 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.05 td @ VOB = 2.0 V 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 30 0.1 0.03 0.05 tr @ VCC = 30 V tr @ VCC = 10 V TJ = 25C IC/IB = 10 1.0 t, TIME ( s) 0.7 0.5 0.3 3.0 Figure 6. Capacitance versus Voltage TJ = 25C IB1 = IB2 IC/IB = 10 ts ts - 1/8 tf ts t, TIME ( s) tf @ VCC = 30 V tf @ VCC = 10 V 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 30 Figure 7. Turn-On Time Figure 8. Turn-Off Time http://onsemi.com 3 2N5302 TJ = 175C VCE = 10 V VCE = 2.0 V VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 200 hFE, DC CURRENT GAIN 100 70 50 30 20 10 0.03 0.05 -55C 2.0 TJ = 25C 1.6 1.2 0.8 0.4 0 0.01 0.02 IC = 2.0 A 5.0 A 10 A 20 A 25C 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 30 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMP) 2.0 5.0 10 Figure 9. DC Current Gain RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) Figure 10. Collector Saturation Region 108 107 106 105 104 103 102 0 IC ICES IC = 10 x ICES VCE = 30 V 2.0 1.8 1.6 V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.03 0.05 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.1 0.3 0.5 1.0 3.0 5.0 10 30 TJ = 25C IC = 2 x ICES TYPICAL ICES VALUES OBTAINED FROM FIGURE 13 20 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (AMP) Figure 11. Effects of Base-Emitter Resistance V, TEMPERATURE COEFFICIENTS (mV/C) 103 IC, COLLECTOR CURRENT ( A) 102 101 25C 100 10-1 10-2 10-3 -0.4 -0.3 REVERSE FORWARD IC = ICES VCE = 30 V TJ = 175C 100C +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.03 0.05 0.1 Figure 12. "On" Voltages TJ = -55C to +175C *APPLIES FOR IC/IB < hFE @ VCE + 2.0 V 2 *VC for VCE(sat) VB for VBE(sat) -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.3 0.5 1.0 3.0 5.0 10 30 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) Figure 13. Collector Cut-Off Region Figure 14. Temperature Coefficients http://onsemi.com 4 2N5302 PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z A N C -T- E D 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 K M 0.13 (0.005) U V 2 TQ M Y M L G 1 -Y- H B -Q- 0.13 (0.005) M TY M http://onsemi.com 5 2N5302 Notes http://onsemi.com 6 2N5302 Notes http://onsemi.com 7 2N5302 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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